CM600HG-90H Powerex Inc, CM600HG-90H Datasheet - Page 6
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CM600HG-90H
Manufacturer Part Number
CM600HG-90H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM600HG-90H.pdf
(7 pages)
Specifications of CM600HG-90H
Prx Availability
RequestQuote
Voltage
4500V
Current
600A
Circuit Configuration
Single
Rohs Compliant
No
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
1.2
1.0
0.8
0.6
0.4
0.2
-1
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
10
-3
1
R
R
V
R
Inductive load
CC
th(j–c)Q
th(j–c)R
2 3 5 7
G
2 3
TRANSIENT THERMAL IMPEDANCE
= 15Ω, T
= 2250V, V
HALF-BRIDGE SWITCHING TIME
4
COLLECTOR CURRENT ( A )
t
= 33.0K/kW
t
= 16.5K/kW
f
r
5 7
10
-2
CHARACTERISTICS
CHARACTERISTICS
j
10
2 3 5 7
= 125°C
2
GE
( TYPICAL )
TIME ( s )
2 3
= ±15V
10
-1
4
5 7
2 3 5 7
10
3
t
t
10
d(off)
d(on)
2 3
0
2 3 5 7
4
5 7
10
10
1
4
6
Z
R
τ
i
th( j –c )
[K/kW]
i
10
[sec]
10
10
10
-1
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
FREE-WHEEL DIODE REVERSE RECOVERY
1
V
R
Inductive load
( t )
CC
G
2 3
= 15Ω, T
=
= 2250V, V
Σ
i=1
0.0059
0.0002
n
4
5 7
1
EMITTER CURRENT ( A )
R
CHARACTERISTICS
j
i
10
MITSUBISHI HVIGBT MODULES
= 125°C
HIGH POWER SWITCHING USE
1–exp
2
GE
( TYPICAL )
2 3
= ±15V
0.0978
0.0074
2
4
5 7
CM600HG-90H
–
t
t
10
i
0.6571
0.0732
3
INSULATED TYPE
3
l
t
rr
rr
2 3
4
5 7
0.2392
0.4488
10
4
May 2009
10
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
4
4
3
2
1