CM800HG-90R Powerex Inc, CM800HG-90R Datasheet - Page 8
CM800HG-90R
Manufacturer Part Number
CM800HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM800HG-90R.pdf
(8 pages)
Specifications of CM800HG-90R
Prx Availability
RequestQuote
Voltage
4500V
Current
800A
Circuit Configuration
Single
Rohs Compliant
No
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
TRANSIENT THERMAL IMPEDANCE
1
0
0.001
SAFE OPERATING AREA (SCSOA)
0
V
Tj = 125°C, R
Rth(j-c)Q = 16.0K/kW
Rth(j-c)D = 29.5K/kW
CC
≤ 3200V, V
1000
Collector-Emitter Voltage [V]
CHARACTERISTICS
0.01
SHORT CIRCUIT
G(on)
GE
= 4.0Ω, R
= ±15V
2000
Time [s]
0.1
G(off)
3000
= 15Ω
1
4000
5000
10
Z
R
t
i
i
[sec] :
FREE-WHEEL DIODE REVERSE RECOVERY
[K/kW] :
th
j (
2500
2000
1500
1000
−
) c
500
SAFE OPERATING AREA (RRSOA)
(
0
) t
0
=
V
Tj = 125°C
0.0055
0.0001
∑
i
1
CC
n
=
1
≤ 3200V, di/dt < 4kA/µs
Emitter-Collector Voltage [V]
1000
R
i
⎧
⎪
⎨
⎪ ⎩
1
CM800HG-90R
0.2360
0.0131
2
−
2000
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
exp
⎛
⎜
⎜
⎝
0.4680
0.0878
−
3
3000
τ
t
HVM-1062
i
⎞
⎟
⎟
⎠
⎫
⎪
⎬
⎪ ⎭
INSULATED TYPE
4000
0.2905
0.6247
4
8 of 8
5000