CM200HG-130H Powerex Inc, CM200HG-130H Datasheet - Page 3

• Manufacturer Part Number: CM200HG-130H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM200HG-130H

• Voltage: 6500V
• Current: 200A
• Circuit Configuration: Single
• Rohs Compliant: No

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current*
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Emitter-Collector Voltage**
Turn-On Delay Time
Turn-On Rise Time
Turn-On Switching Energy
Turn-Off Delay Time
Turn-Off Fall Time 1
Turn-Off Fall Time 2
Turn-Off Switching Energy
Reverse Recovery Time 1**
Reverse Recovery Time 2**
Reverse Recovery Charge**
Reverse Recovery Energy**
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Mechanical Characteristics, T
Characteristics
Comparative Tracking Index
Clearance
Creepage Distance
Internal Inductance
Internal Lead Resistance
8/05
j
= 25 °C unless otherwise specified
j
= 25 °C unless otherwise specified
j
R
R
= 25 °C unless otherwise specified
R
V
L
V
Symbol
Symbol
R
Symbol
th(j-c)
th(j-c)
C-E(int)
CE(sat)
t
t
C-E(int)
I
C
I
GE(th)
C
C
V
E
d(on)
d(off)
CES
GES
E
E
th(c-f)
CTI
Q
t
t
Q
t
t
rr1
rr2
oes
res
EC
t
rec
–
–
ies
on
f1
f2
off
G
r
rr
Q
D
T
T
Per Module, Thermal Grease Applied
V
V
j
j
V
V
I
CC
GE1
= 125°C, t
= 125°C, t
I
C
I
CE
C
I
E
CE
E
= 200A, V
= 200A, V
= 200A, V
= 3600V, I
t
= 200A, V
= V
V
V
V
off
= -V
= V
V
I
V
CC
CC
CC
C
V
GE
= 60µs, Inductive Load
CE
GE1
CES
di
CES
= 20mA, V
GE2
= 3600V, I
= 3600V, I
= 3600V, I
R
e
Test Conditions
Test Conditions
Test Conditions
= V
off
off
/dt = -670A/
= 10V, V
f = 100kHz,
T
G(off)
, V
T
Per FWDi
Per IGBT
= -V
, V
GE
j
GE
GE
= 60µs, Inductive Load
= 60µs, Inductive Load
GES
j
C
GE
= 15V, R
= 125°C,
GE
= 25°C
GE
= 200A, V
= 15V, T
–
–
–
–
–
GE2
= 15V, T
= 0V, T
= 72Ω,
= 0V, T
, V
= 0V, T
= 0V, T
CE
GE
C
C
E
CE
= 15V,
= 200A,
= 200A,
= 200A,
= 10V
G(on)
μ
= 0V,
j
= 0V
j
s,
j
= 125°C
j
j
= 125°C
= 25°C
j
GE
= 125°C
= 25°C
= 25°C
= 30Ω,
= 15V
Min.
Min.
Min.
26.0
56.0
600
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
41.0
0.35
18.0
Typ.
370
Typ.
Typ.
6.0
5.1
5.0
2.5
0.7
3.3
4.0
3.6
1.2
1.5
6.6
0.5
3.3
1.2
1.0
2.4
0.7
10
–
–
–
–
–
–
–
54.0
–
Max.
Max.
Max.
30.0
42.0
66.0
3.0
7.0
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
K/kW
K/kW
K/kW
Units
Volts
Volts
Volts
Volts
Volts
Units
Units
mm
mm
mΩ
mA
mA
J/P
J/P
J/P
µH
µA
nF
nF
nF
µC
µC
µs
µs
µs
µs
µs
µs
µs
–
3