FSD146MRBN Fairchild Semiconductor, FSD146MRBN Datasheet
FSD146MRBN
Related parts for FSD146MRBN
FSD146MRBN Summary of contents
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... Compared with a discrete MOSFET and PWM controller solution, the FSD146MRBN can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform that is well suited for cost-effective design of a flyback converter ...
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... Application Circuit Internal Block Diagram © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Figure 1. Typical Application Circuit Figure 2. Internal Block Diagram 2 www.fairchildsemi.com ...
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... GND. If the voltage of this pin reaches 7.0V, the overload protection triggers, which shuts down the FPS™. 4 N.C. No Connection SenseFET Drain. High-voltage power SenseFET drain connection Drain © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Figure 3. Pin Configuration (Top View) Description 3 www.fairchildsemi.com ...
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... Junction-to-Ambient Thermal Impedance JA Ψ Junction-to-Lead Thermal Impedance JL Notes: 10. JEDEC recommended environment, JESD51-2, and test board, JESD51-10, with minimum land pattern. 11. Measured on the SOURCE pin #7, close to the plastic interface. © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Parameter T =25C C (6) T =100C C ...
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... LEB V Over-Voltage Protection OVP t Threshold Time OSP Output-Short V Threshold V (12) OSP Protection t V OSP_FB TSD Thermal Shutdown Temperature T HYS © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Conditions 250 650V =10V (12 25V ...
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... STR STR Notes: 12. Although these parameters are guaranteed, they are not 100% tested in production. 13. Average value. 14. t includes gate turn-on time. LEB Comparison of FSGM300N and FSD146MRBN Function FSGM300N Operating Current 1.5mA Power Balance Long t © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 ...
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... Temperature [ °C] Figure 7. Startup Charging Current (I 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 ‐40'C ‐20'C 0'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ °C] Figure 9. Feedback Source Current (I © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 =25°C. A 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 ‐40'C ‐20'C ) vs. T Figure 6. Operating Switching Current ( 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 ‐40'C ‐20 ...
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... Temperature [ °C] Figure 13. Shutdown Feedback Voltage (V vs. T 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 ‐40'C ‐20'C 0'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ °C] Figure 15. Switching Frequency (f © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 =25°C. A 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 ) vs. T Figure 12. UVLO Threshold Voltage (V START A 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 ‐40'C ‐20'C ) Figure 14. Over-Voltage Protection (V ...
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... V goes below the stop voltage of 7.5V. CC Figure 17. Startup Block 2. Soft-Start: The FSD146MRBN has an internal soft- start circuit that increases PWM comparator inverting input voltage, together with the SenseFET current, slowly after it starts. The typical soft-start time is 15ms. The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors ...
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... SenseFET during the minimum turn-on time. Even though the FSD146MRBN has overload protection not enough to protect the FSD146MRBN in that abnormal case; since severe current stress is imposed on the SenseFET until OLP is triggered. The FSD146MRBN internal AOCP circuit is shown in Figure 21. When the ...
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... Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 5. Soft Burst-Mode Operation: To minimize power dissipation in Standby Mode, the FSD146MRBN enters Burst-Mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 23, the device automatically enters Burst Mode when the ...
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... The SMD-type capacitor (C106) must be placed as close as possible to the V abrupt pulsating noises and to improve ESD and surge immunity. Capacitance between 100nF and 220nF is recommended. Schematic © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Input Voltage Rated Output 5.0V(2A 265V AC 14.0V(1.2A) Figure 25 ...
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... Insulation: Polyester Tape t = 0.025mm, 2 Layers Electrical Characteristics Inductance Leakage Core & Bobbin Core: EER3016 (Ae=109.7mm Bobbin: EER3016 © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Figure 26. Schematic of Transformer Wire Turns Winding Method 0.25φ×1 22 Solenoid Winding 0.4φ×2 (TIW) 3 Solenoid Winding 0.2φ ...
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... KA431LZ IC301 FOD817B Diode D101 1N4007 D102 UF4007 ZD101 1N4750 D201 MBRF10H100 D202 MBRF1060 BD101 G2SBA60 © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 Note Part # Capacitor C101 220nF/275V C102 150nF/275V DSC C103 100F/400V C104 3.3nF/630V 1W C105 15nF/100V 1W C106 ...
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... Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2011 Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 9.83 9.00 6.67 6.096 3 ...
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... Fairchild Semiconductor Corporation FSD146MRBN • Rev. 1.0.0 16 www.fairchildsemi.com ...