FSBH0370NY_F116 Fairchild Semiconductor, FSBH0370NY_F116 Datasheet - Page 14
FSBH0370NY_F116
Manufacturer Part Number
FSBH0370NY_F116
Description
The highly integrated FSBH-series consists of an integrated current-mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V SenseFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FSBH0F70A_F116.pdf
(16 pages)
- Current page: 14 of 16
- Download datasheet (939Kb)
© 2010 Fairchild Semiconductor Corporation
FSBH0F70A_F116, FSBH0170/0270/0370_F116 • Rev. 1.0.1
Figure 34.
OLP Operation
14
V
V
by over voltage on the VDD pin. The OVP is triggered
when V
130µs) prevents false trigger by switching noise.
Over-Temperature Protection (OTP)
The SenseFET and the control IC are integrated,
making it easier to detect the temperature of the
SenseFET. As the temperature exceeds approximately
142°C, thermal shutdown is activated.
DD
DD
Over-Voltage Protection (OVP)
over-voltage protection prevents IC damage caused
DD
voltage reaches 28V. Debounce time (typically
www.fairchildsemi.com
Related parts for FSBH0370NY_F116
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
The highly integrated FSBH-series consists of an integrated current-mode Pulse Width Modulator (PWM) and an avalanche-rugged 700V SenseFET
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: