FSEZ1216 Fairchild Semiconductor, FSEZ1216 Datasheet - Page 6

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FSEZ1216

Manufacturer Part Number
FSEZ1216
Description
The primary-side PWM integrated Power MOSFET, FSEZ1216, significantly simplifies power supply design that requires CV and CC regulation capabilities
Manufacturer
Fairchild Semiconductor
Datasheet

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© 2009 Fairchild Semiconductor Corporation
FSEZ1216 • Rev. 1.0.1
Electrical Characteristics
V
Voltage-Error-Amplifier Section
Current-Error-Amplifier Section
Cable Compensation Section
Internal MOSFET Section
Over-Temperature-Protection Section
Notes:
2.
3.
4.
∆BV
DD
Symbol
I
I
DCY
V-SOURCE
R
I-SOURCE
V
V
BV
=15V and T
V
I
t
I
C
V-SINK
t
T
D-OFF
C
Pulse test: pulse width ≦ 300µs, duty cycle ≦ 2%.
Essentially independent of operating temperature.
When over-temperature protection is activated, the power system enters latch mode and output is disabled.
I-SINK
DS(ON)
V
DSS
I
V-HGH
D-ON
V
COMR
I
V
V
I-HGH
DSS
OTP
I
SM
OSS
t
t
ISS
VR
S
IR
DSS
r
f
N
G
MAX
/∆T
J
Reference Voltage
Green Mode Starting Voltage on
COMV Pin
Green Mode Ending Voltage on
COMV Pin
Output Sink Current
Output Source Current
Output High Voltage
Reference Voltage
Output Sink Current
Output Source Current
Output High Voltage
Variation Test Voltage on COMR
Pin for Cable Compensation
Maximum Duty Cycle
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Maximum Continuous Drain-
Source Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Static Drain-Source On-
Resistance
Drain-Source Leakage Current
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Threshold Temperature for
OTP
A
=25°C unless otherwise specified.
(4)
Parameter
(2,3)
f
f
V
V
V
V
V
V
R
I
I
I
V
V
V
V
S
S
D
D
D
VS
VS
VS
CS
CS
CS
DS
DS
DS
GS
=f
=1KHz
COMR
=250μA, V
=250μA, Referenced to 25°C
=0.5A, V
=3V, V
=2V, V
=2.3V
OSC
=3V, V
=0V, V
=0V
=600V, V
=480V, V
=300V, I
=0V, V
=100k
-2KHz, V
6
Conditions
COMV
COMV
COMI
COMI
GS
DS
D
GS
=25V, f
=10V
GS
GS
=1.1A, R
=2.5V
=2.5V
=0V
=2.5V
=2.5V
=0V, T
=0V, T
VS
=2.3V
S
=1MHz
C
C
G
=25°C
=100°C
=25Ω
2.475
2.475
Min.
600
4.5
4.5
2.500
2.500
0.735
Typ.
+140
130
2.8
0.8
0.6
9.3
90
90
55
55
75
21
13
27
19
7
Max.
2.525
2.525
11.5
170
10
24
52
36
64
25
1
4
1
www.fairchildsemi.com
Units
V/°C
μA
μA
μA
μA
μA
pF
pF
ns
ns
ns
ns
°C
%
V
V
V
V
V
V
V
V
A
A

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