FAN73711 Fairchild Semiconductor, FAN73711 Datasheet - Page 5

• Manufacturer Part Number: FAN73711
• Description: The FAN73711 is a monolithic high-side gate drive IC that can drive high-speed MOSFETs and IGBTs operating up to +600V
• Manufacturer: Fairchild Semiconductor

FAN73711 • Rev. 1.0.0
© 2009 Fairchild Semiconductor Corporation
Electrical Characteristics
V
The V
Note:
5.
Dynamic Electrical Characteristics
V
Symbol
V
V
BIAS
Power Supply Section
Bootstrapped Supply Section
V
Shung Regulator Section
Input Logic Section
Gate Driver Output Section
DD
Symbol
V
I
SHUNT
I
BSUV+
BSHYS
I
I
V
BSUV-
V
I
R
QDD
V
PDD
QBS
PBS
V
I
I
I
I
V
IN+
=V
IN-
O+
LK
OH
O-
OL
t
t
IH
IL
IN
S
(V
on
off
t
t
These parameters guaranteed by design.
O
r
f
BS
DD
and I
=15V, GND=0V, C
, V
Quiescent V
Operating V
V
Threshold Voltage
V
Threshold Voltage
V
Hysteresis Voltage
Offset Supply Leakage Current
Quiescent V
Operating V
V
Voltage
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic Input High Bias Current
Logic Input Low Bias Current
Input Pull-Down Resistance
High Level Output Voltage (V
Low Level Output Voltage
Output High, Short-Circuit Pulsed Current
Output Low, Short-Circuit Pulsed Current
Allowable Negative V
Signal Propagation to HO
BS
BS
BS
DD
O
BS
Turn-On Propagation Delay Time
Turn-Off Propagation Delay Time
Turn-On Rise Time
Turn-Off Fall Time
parameters are relative to V
Supply Under-Voltage Positive-Going
Supply Under-Voltage Negative-Going
Supply Under-Voltage Lockout
and V
)=15.0V, T
BS
DD
BS
DD
BS
Characteristics
Shunt Regulator Clamping
Supply Current
A
Supply Current
Supply Current
Supply Current
Parameter
LOAD
= 25°C, unless otherwise specified. The V
S
=1000pF, T
Pin Voltage for IN
BIAS
S
A
and are applicable to the respective output HO.
- V
=25°C, unless otherwise specified.
O
)
(5)
(5)
V
V
V
f
V
V
V
V
V
C
V
I
V
V
No Load
No Load
V
V
S
S
Value
IN
SHUNT
=0V
=0V
IN
BS
BS
BS
B
IN
DD
IN
IN
HO
HO
LOAD
5
=20KHz, No Load
=V
=0V or 5V
=0V or 5V
=5V
=0V
=Sweep
=Sweep
=Sweep
=Sweep or V
=0V, V
=15V,V
S
=1000pF, f
=625V
=5mA
Conditions
Test Condition
IN
IN
=5V, PW ≤10µs
=0V, PW ≤10µs
IN
BS
IN
and I
=20KHz, rms
=Sweep
IN
parameters are referenced to GND.
Min.
Min. Typ. Max. Unit
8.0
7.3
2.5
21
90
3
3
Typ.
150
150
25
15
470
-9.8
110
9.0
8.3
0.7
25
35
60
23
40
4
4
Max.
210
210
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50
40
10.0
-7.0
100
120
800
9.3
0.8
1.2
70
10
25
65
30
2
Unit
KΩ
mV
μA
μA
μA
μA
μA
μA
μA
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A
V