FFPF04S60S Fairchild Semiconductor, FFPF04S60S Datasheet

no-image

FFPF04S60S

Manufacturer Part Number
FFPF04S60S
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FFPF04S60STU
Manufacturer:
FSC
Quantity:
2 000
Company:
Part Number:
FFPF04S60STU
Quantity:
1 000
©2007 Fairchild Semiconductor Corporation
FFPF04S60S Rev. A
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FFPF04S60S
Features
• High Speed Switching, t
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
V
V
V
I
I
T
R
F(AV)
FSM
Device Marking
J
RRM
RWM
R
θJC
, T
Symbol
Symbol
STG
F04S60S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range
Maximum Thermal Resistance, Junction to Case
1. Cathode 2. Anode
rr
FFPF04S60STU
< 25ns @ I
Device
F
= 4A
TO-220F-2L
T
C
= 25
Parameter
Parameter
TO-220F-2L
o
Package
C unless otherwise noted
@ T
C
= 116
1
4A, 600V STEALTH
The FFPF04S60S is STEALTH
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
o
C
Reel Size
-
STEALTH II Rectifier
1. Cathode
Tape Width
2. Anode
TM
-
TM
-65 to +150
II Rectifier
TM
Ratings
Ratings
II rectifier with soft recovery
600
600
600
40
6.8
4
October 2007
Quantity
www.fairchildsemi.com
50
Units
Units
o
C/W
o
V
V
V
A
A
C
tm

Related parts for FFPF04S60S

FFPF04S60S Summary of contents

Page 1

... Device F04S60S FFPF04S60STU ©2007 Fairchild Semiconductor Corporation FFPF04S60S Rev. A 4A, 600V STEALTH The FFPF04S60S is STEALTH = 4A F characteristics silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...

Page 2

... S factor 4A, di/dt = 200A/µ factor Avalanche Energy ( L = 40mH) AVL Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFPF04S60S Rev unless otherwise noted C Parameter 125 ...

Page 3

... Figure 5. Typical Reverse Recovery Current vs. di/ 125 100 200 300 400 [ µ ] di/ FFPF04S60S Rev. A Figure 2. Typical Reverse Current 0.1 0.01 1E [V] F Figure 4. Typical Reverse Recovery Time 60 Typical Capacitance 100 [V] R Figure 6 ...

Page 4

... Mechanical Dimensions MAX1.47 0.80 2.54TYP [2.54 FFPF04S60S Rev. A TO-220F 2L ±0.10 10.16 ±0.20 ø3.18 (1.00x45°) ±0.10 ±0.10 0.35 2.54TYP ±0.20 ] [2.54 ±0.20 ] 9.40 ±0.20 4 2.54 ±0.20 (0.70) ±0.20 2.76 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFPF04S60S Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...

Related keywords