FFPF12UP20DN Fairchild Semiconductor, FFPF12UP20DN Datasheet
FFPF12UP20DN
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FFPF12UP20DN Summary of contents
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... J, STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device F12UP20DN FFPF12UP20DNTU ©2006 Fairchild Semiconductor Corporation FFPF12UP20DN Rev 6A) F TO-220F (per diode 25°C unless otherwise noted C Parameter @ T = 120°C C Parameter Package Reel Size ...
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... =6A, di/dt = 200A/µ Avalanche Energy (L = 20mH) AVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% Test Circuit and Waveforms FFPF12UP20DN Rev. A (per diode 25°C unless otherwise noted C Parameter Min ° 100 ° ° 100 °C ...
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... Figure 3. Typical Junction Capacitance 140 120 100 0.1 1 REVERSE VOLTAGE, V Figure 5. Typical Reverse Recovery Current 100 200 di/dt, [A/ FFPF12UP20DN Rev 0.1 0.01 1E-3 1.2 1.4 1.6 [V] F Figure 4. Typical Reverse Recovery Time 1MHz 100 100 [V] R Figure 6 ...
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Package Demensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] © TO-220F ±0.20 ±0.10 10.16 ø3.18 (7.00) (1.00x45°) #1 +0.10 0.50 –0.05 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 ±0.20 2.54 (0.70) ±0.20 2.76 Dimensions in Millimeters Ultrafast Recovery Power ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...