FYPF2010DN Fairchild Semiconductor, FYPF2010DN Datasheet
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FYPF2010DN
Available stocks
Related parts for FYPF2010DN
FYPF2010DN Summary of contents
Page 1
... Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM (per diode) * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation FYPF2010DN TO-220F (per diode) T =25 C unless otherwise noted C Parameter @ T = 105 C C 60Hz Single Half-Sine Wave Parameter ...
Page 2
... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode Case Temperature, T Figure 5. Forward Current Derating Curve ©2002 Fairchild Semiconductor Corporation 10 1 0.1 0.01 1E-3 1.0 1.5 [V] F Figure 2. Typical Reverse Current = 0 100 100µ ...
Page 3
... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2002 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...