FGH40T100SMD Fairchild Semiconductor, FGH40T100SMD Datasheet - Page 5

• Manufacturer Part Number: FGH40T100SMD
• Manufacturer: Fairchild Semiconductor

FGH40T100SMD Rev. C2
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
10000
1000
0.01
100
20
16
12
300
100
0.1
10
8
4
0
10
1
4
0.1
1
*Notes:
I
Common Emitter
V
T
C
1. T
2. T
3. Single Pulse
C
GE
= 20A
Collector-Emitter Voltage, V
= 25
40A
C
J
= 0V, f = 1MHz
Collector-Emitter Voltage, V
= 175
= 25
Gate-Emitter Voltage, V
o
8
C
o
C
o
10
C
1
80A
12
DC
10 ms
100
1ms
Common Emitter
T
C
GE
= 25
100
16
[V]
CE
CE
m
o
s
GE
C
[V]
[V]
10
10
1000
m
s
C
C
C
ies
res
20
oes
2000
30
5
Figure 8. Saturation Voltage vs. V
Figure 12. Turn-on Characteristics vs.
Figure 10. Gate charge Characteristics
100
200
20
16
12
10
15
12
8
4
0
9
6
3
0
4
0
0
I
C
40A
= 20A
t
r
50
10
Gate-Emitter Voltage, V
8
t
Gate Resistance, R
d(on)
Gate Charge, Q
Gate Resistance
100
20
12
200V
150
Common Emitter
V
I
T
T
C
80A
CC
C
C
= 40A
= 25
= 175
30
= 600V, V
g
Common Emitter
T
[nC]
C
G
o
C
o
= 175
GE
[ W ]
200
C
Common Emitter
T
C
16
V
[V]
= 25
GE
CC
GE
o
40
C
= 15V
= 600V
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400V
o
C
250
20
50
300