FGA60N65SMD Fairchild Semiconductor, FGA60N65SMD Datasheet - Page 3

• Manufacturer Part Number: FGA60N65SMD
• Manufacturer: Fairchild Semiconductor

FGA60N65SMD Rev. C0
Electrical Characteristics of the IGBT
Electrical Characteristics of the Diode
Q
Q
Q
V
E
t
I
Q
Symbol
Symbol
rr
rr
FM
rec
g
ge
gc
rr
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Parameter
Parameter
V
V
I
I
dI
F
F
CE
GE
F
= 30A
=30A,
/dt = 200A/ms
= 400V, I
= 15V
Test Conditions
Test Conditions
(Continued)
T
C
= 25°C unless otherwise noted
3
C
= 60A,
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
= 25
= 175
= 175
= 25
= 175
= 25
= 175
= 25
= 175
o
o
o
o
C
C
C
C
o
o
o
o
o
C
C
C
C
C
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
189
127
212
933
2.1
1.7
3.7
8.8
20
91
47
87
Max
Max
284
137
2.6
30
-
-
-
-
-
-
-
-
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Units
Units
nC
nC
nC
nC
uJ
ns
V
A