FGA180N33ATD Fairchild Semiconductor, FGA180N33ATD Datasheet - Page 5

• Manufacturer Part Number: FGA180N33ATD
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGA180N33ATD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
500
10
15
12
20
16
12
9
6
3
0
8
4
0
0
0
0
Common Emitter
T
C
Gate Resistance
I
= 25
C
= 20A
30
40A
20
o
C
4
t
Gate-Emitter Voltage, V
d(on)
t
Gate Resistance, R
r
Gate Charge, Q
60
40
8
V
180A
90A
CC
90
Common Emitter
V
I
T
T
= 100V
C
CC
C
C
60
= 40A
= 25
= 125
12
= 200V, V
g
G
120
[nC]
Common Emitter
T
o
[ Ω ]
C
C
o
GE
C
= 125
200V
GE
[V]
80
GE
16
150
o
C
= 15V
100
180
20
5
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
1000
6000
4000
2000
Figure 12. Turn-off Characteristics vs.
100
5000
1000
0.1
10
100
70
1
0
1
1
0
I
C
*Notes:
I
Common Emitter
V
I
T
T
C
MAX (Pulse)
1. T
2. T
3. Single Pulse
C
C
C
CC
MAX (Continuous)
= 40A
= 25
= 125
Collector-Emitter Voltage, V
C
J
= 200V, V
= 150
Collector-Emitter Voltage, V
= 25
Gate Resistance
o
20
C
o
C
o
Gate Resistance, R
C
o
C
C
C
C
oes
res
GE
10
ies
= 15V
DC Operation
40
10ms
60
1ms
Common Emitter
V
T
100
C
GE
G
100
= 25
10
[
Ω
= 0V, f = 1MHz
CE
]
µ
CE
o
s
C
[V]
10
80
[V]
µ
s
t
d(off)
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t
f
1000
100
30