FGPF4633 Fairchild Semiconductor, FGPF4633 Datasheet - Page 4
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FGPF4633
Manufacturer Part Number
FGPF4633
Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGPF4633.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGPF4633
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FGPF4633 Rev. B
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
15
12
70
10
20
16
12
9
6
3
0
6
8
4
0
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
I
C
40A
= 20A
o
10
C
4
Gate-Emitter Voltage, V
15
Gate Resistance, R
Gate Charge, Q
t
d(on)
t
r
70A
20
V
8
CC
= 100V
30
Common Emitter
V
I
T
T
C
C
C
CC
30
12
= 20A
= 25
= 125
g
= 200V, V
[nC]
200V
Common Emitter
T
G
C
o
[ Ω ]
C
GE
o
= 125
C
45
GE
[V]
40
16
GE
o
C
= 15V
60
50
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
3000
2000
1000
0.01
500
100
500
100
0.1
10
40
1
0
0.1
0.1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Gate Resistance
Collector-Emitter Voltage, V
10
t
t
d(off)
f
Gate Resistance, R
1
20
1
10
Common Emitter
V
I
T
T
C
30
CC
C
C
= 20A
DC
= 25
= 125
Common Emitter
V
T
G
= 200V, V
C
GE
10 ms
[ Ω ]
C
C
C
= 25
o
oes
ies
= 0V, f = 1MHz
res
CE
1ms
C
o
C
CE
100
o
[V]
C
40
100
10
[V]
GE
μ
10
www.fairchildsemi.com
s
= 15V
μ
s
500
50
30