FGH30N120FTD Fairchild Semiconductor, FGH30N120FTD Datasheet
FGH30N120FTD
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FGH30N120FTD Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation Rev. A FGH30N120FTD General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche = 30A C ruggedness ...
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... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc Rev. A FGH30N120FTD Package Reel Size TO-247 - T = 25°C unless otherwise noted C Test Conditions = 0V 250µ ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGH30N120FTD Rev 25°C unless otherwise noted C Test Conditions Min 30A 125 ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T Rev. A FGH30N120FTD Figure 2. Typical Output Characteristics 180 150 120 12V 90 60 10V [V] CE Figure 4. Transfer Characteristics 120 100 80 60 ...
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... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 500 100 t r Common Emitter V t d(on Gate Resistance, R Rev. A FGH30N120FTD Figure 8. Capacitance Characteristics GE 8000 Common Emitter 125 C C 6000 4000 2000 16 20 [V] GE Figure 10. SOA Characteristics 200 100 600V 400V 0 ...
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... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V Rev. A FGH30N120FTD Figure 14. Turn-off Characteristics vs. 1200 1000 d(on) 100 40 50 [A] C Figure 16. Switching Loss vs. Collector Current = 600V 15V 30A ...
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... Figure 19. Reverse Current 50 200A di/dt = 100A Forward Current, I Figure 21. Reverse Recovery Time 1000 di/dt = 100A/ 800 200A/ 600 400 10 20 Forward Current, I Figure 22. Transient Thermal Impedance of IGBT FGH30N120FTD Rev. A Figure 20. Stored Charge µ s µ [A] F µ s µ [ µ ...
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... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Rev. A FGH30N120FTD 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH30N120FTD Rev. A F-PFS™ PowerTrench ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ ...