FGH40N60SF Fairchild Semiconductor, FGH40N60SF Datasheet - Page 3
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FGH40N60SF
Manufacturer Part Number
FGH40N60SF
Description
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH40N60SF.pdf
(8 pages)
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Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
C-MEIDA
Quantity:
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Part Number:
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Manufacturer:
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Company:
Part Number:
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Manufacturer:
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Quantity:
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FGH40N60SF Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
25
0
T
Common Emitter
V
T
T
C
Common Emitter
V
Temperature at Variant Current Level
GE
C
C
Collector-EmitterCase Temperature, T
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
1.5
50
1
3.0
20V
75
2
I
C
= 20A
80A
40A
15V
V
GE
4.5
100
CE
CE
3
= 8V
12V
[V]
10V
[V]
C
[
o
C
]
6.0
125
4
3
Figure 2. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
120
100
120
80
60
40
20
20
16
12
80
40
0
8
4
0
0.0
0
4
6
T
C
Common Emitter
V
T
T
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
C
o
I
Gate-Emitter Voltage, V
C
C
1.5
Gate-Emitter Voltage,V
8
= 20A
8
40A
3.0
12
20V
10
80A
Common Emitter
T
C
GE
= -40
GE
4.5
16
CE
15V
[V]
[V]
V
o
[V]
C
GE
12V
10V
12
= 8V
GE
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6.0
20
13