FGA60N60UFD Fairchild Semiconductor, FGA60N60UFD Datasheet - Page 5

• Manufacturer Part Number: FGA60N60UFD
• Description: Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGA60N60UFD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
6000
4000
2000
0.01
500
100
0.1
20
16
12
10
8
4
0
0
1
0
1
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
3
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
I
C
C
C
C
= 30A
res
oes
ies
10
6
60A
9
Common Emitter
V
T
Common Emitter
T
C
GE
100
12
C
120A
10
= 25
GE
= 25
= 0V, f = 1MHz
CE
[V]
o
CE
[V]
o
C
100
10 ms
GE
C
1ms
DC
[V]
15
µ
10
s
µ
s
1000
18
30
Figure 12. Turn off Switching SOA Characteristics
5
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
20
16
12
300
100
15
12
8
4
0
10
9
6
3
0
1
0
0
1
Common Emitter
T
Safe Operating Area
V
C
GE
= 25
= 15V, T
3
Collector-Emitter Voltage, V
o
Gate-Emitter Voltage, V
C
50
I
C
60A
C
Gate Charge, Q
6
= 125
10
= 30A
V
CC
o
= 100V
C
100
9
g
Common Emitter
T
12
[nC]
100
C
GE
= 125
120A
150
[V]
GE
CE
200V
o
C
15
[V]
300V
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1000
18
200