FGH75N60UF Fairchild Semiconductor, FGH75N60UF Datasheet - Page 2

• Manufacturer Part Number: FGH75N60UF
• Manufacturer: Fairchild Semiconductor

FGH75N60UF Rev. A1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
BV
T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
J
CES
FGH75N60UF
CES
Collector to Emitter Breakdown Voltage V
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
FGH75N60UFTU
Parameter
Device
Package
TO-247
V
V
V
I
I
I
T
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 250A, V
= 75A
= 75A
= 125
= 3, V
= 3, V
= 30V
= V
= 400V, I
= 0V, I
= 0V, I
= V
= 400V, I
= 400V, I
= 15V
Test Conditions
T
C
CES
GES
,
,
o
= 25°C unless otherwise noted
V
V
C
,
GE
GE
2
C
C
V
GE
GE
, V
, V
GE
= 250A
= 250A
C
C
C
CE
= 15V
= 15V,
= 15V,
= 15V,
GE
CE
= 75A,
= 75A,
= 75A,
= 0V,
Packaging
= V
C
C
= 0V
= 0V
= 25
= 125
GE
Type
Tube
o
C
o
C
Qty per Tube
Min.
600
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30ea
Typ.
3850
0.75
2.15
3.05
1.35
375
147
128
153
250
130
5.0
1.9
4.4
3.6
1.8
5.4
27
70
30
27
74
35
30
-
-
-
Max.
±400
250
6.5
2.4
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Qty
per Box
www.fairchildsemi.com
-
Units
V/
mJ
mJ
mJ
mJ
mJ
mJ
A
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
o
C