FGA30N60LSD Fairchild Semiconductor, FGA30N60LSD Datasheet - Page 5

• Manufacturer Part Number: FGA30N60LSD
• Description: The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors
• Manufacturer: Fairchild Semiconductor

FGA30N60LSD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
Figure 9. Gate Charge Characteristics
Figure 11. Load Current Vs. Frequency
20
16
12
15
12
80
70
60
50
40
30
20
10
8
4
0
9
6
3
0
0
0.1
0
0
Common Emitter
I
T
C
C
Duty cycle : 50%
T
Powe Dissipation = 192W
= 30A
= 25
c
= 100
o
C
50
4
Gate-Emitter Voltage, V
I
o
C
C
= 15A
1
Gate Charge, Q
V
load Current : peak of square wave
cc
Frequency [kHz]
100
= 400V
8
V
cc
10
= 100V
30A 60A
150
12
g
[nC]
Common Emitter
T
C
200V
GE
= 125
100
[V]
300V
200
16
o
C
1000
250
20
(Continued)
5
Figure 12. Turn-On Characteristics vs.
Figure 8. Capacitance characteristics
Figure 10. SOA Characteeristics
13000
10000
1000
200
100
100
10
50
100
300
0.1
10
0
0
1
0.1
I
c
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
I
c
MAX (Continuous)
MAX (Pulsed)
t
t
Collector-Emitter Voltage, V
Gate Resistance
d(on)
r
5
Collector-Emitter Voltage, V
10
C
= 25
1
Gate Resistance, R
C
C
C
res
ies
oes
10
o
C
20
10
15
Common Emitter
V
I
T
T
C
CC
C
C
30
DC Operation
= 30A
Common Emitter
V
T
= 25
= 125
GE
C
= 400V, V
20
G
= 25
100
= 0V, f = 1MHz
o
[ Ω ]
CE
C
o
C
o
[V]
C
CE
40
GE
25
[V]
= 15V
www.fairchildsemi.com
1000
100
1ms
50
µ
µ
30
s
s
50