FGH80N60FD2 Fairchild Semiconductor, FGH80N60FD2 Datasheet - Page 4

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FGH80N60FD2

Manufacturer Part Number
FGH80N60FD2
Description
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet
FGH80N60FD Rev. A2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
160
120
80
40
3.5
3.0
2.5
2.0
1.5
1.0
80
40
0
0
0
25
0
T
Characteritics
Common Emitter
V
T
T
C
Temperature at Variant Current Level
GE
C
C
= 25
= 25
= 125
= 15V
o
Collector-Emitter Voltage, V
1
Collector-Emitter Voltage, V
o
C
20V
C
2
o
C
50
Case Temperature, T
2
12V
4
15V
3
75
6
V
GE
4
40A
80A
20A
Common Emitter
V
C
GE
= 8V
[
10V
CE
o
CE
100
= 15V
C]
[V]
8
[V]
5
6
10
125
4
Figure 2. Typical Saturation Voltage
160
120
Figure 4. Transfer Characteristics
160
120
Figure 6. Saturation Voltage vs. Vge
20
16
12
80
40
80
40
8
4
0
0
0
4
0
2
T
Common Emitter
V
T
T
C
C
C
CE
= 125
I
C
= 25
= 125
= 20V
= 20A
Collector-Emitter Voltage, V
o
o
2
C
C
o
Gate-Emitter Voltage, V
4
C
Gate-Emitter Voltage,V
8
20V
Characteristics
4
6
40A
12V
12
15V
80A
6
8
V
Common Emitter
T
GE
C
GE
= 25
= 8V
GE
16
10V
[V]
CE
o
[V]
C
8
[V]
10
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20
10
12

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