SGL50N60RUFD Fairchild Semiconductor, SGL50N60RUFD Datasheet - Page 5

• Manufacturer Part Number: SGL50N60RUFD
• Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
10000
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
1000
100
500
100
0.1
10
1
0.3
10
I
I
Common Emitter
V
T
T
C
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
C
GE
MAX. (Continuous)
MAX. (Pulsed)
= 25℃ ━━
= 125℃ ------
= ± 15V, R
20
C
= 25℃
Collector-Emitter Voltage, V
1E-3
0.01
1
0.1
G
Collector Current, I
1
= 5.9
10
40
0.5
0.2
0.1
0.05
0.01
0.02
-5
DC Operation
single pulse
10
60
Eon
10
C
-4
[A]
1㎳
Fig 17. Transient Thermal Impedance of IGBT
CE
100
[V]
100us
80
50us
10
Rectangular Pulse Duration [sec]
Eoff
Eoff
-3
1000
100
10
-2
Fig 14. Gate Charge Characteristics
100
10
15
12
9
6
3
0
1
Fig 16. Turn-Off SOA Characteristics
0
1
Common Emitter
R
T
10
C
L
= 6
= 25℃
-1
30
Collector-Emitter Voltage, V
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm
Gate Charge, Q
10
60
10
Safe Operating Area
V
GE
t1
0
= 20V, T
V
t2
CC
= 100 V
90
Zthjc + T
C
= 100℃
g
C
[ nC ]
10
120
100
1
300 V
200 V
CE
[V]
150
SGL50N60RUFD Rev. A1
1000
180