FJD5553 Fairchild Semiconductor, FJD5553 Datasheet - Page 2

• Manufacturer Part Number: FJD5553
• Manufacturer: Fairchild Semiconductor

FJD5553 Rev. A1
© 2008 Fairchild Semiconductor Corporation
Electrical Characteristics *
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
BV
BV
BV
h
V
V
C
t
t
t
t
t
t
EAS
ON
STG
F
ON
STG
F
FE
Symbol
CE
BE
ob
CBO
CEO
EBO
(sat)
(sat)
*
Avalanche Energy
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Turn On Time
Storage Time
Fall Time
Turn On Time
Storage Time
Fall Time
DC Current Gain
Parameter
T
C
=25°C unless otherwise noted
I
I
I
V
V
I
I
V
V
I
R
V
I
R
L= 2mH
C
C
E
C
C
B1
B1
CE
CE
CB
CC
CC
L
L
=500µA, I
=500µA, I
=5mA, I
=1A, I
=1A, I
=250Ω
=100Ω
=45mA, I
=0.5A, I
=5V, I
=3V, I
=10V, f=1MHz
=125V, I
=250V, I
Conditions
B
B
=0.2A
=0.2A
2
B
C
C
B2
=0
=10mA
=0.4A
C
E
B2
C
C
=0
=0
=1.0A
=0.5A
=2.5A
=0.5A
Min.
1050
400
3.5
14
10
30
Typ.
0.23
0.3
45
Max
0.5
1.2
1.0
1.2
2.0
2.5
0.3
60
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Units
mJ
pF
µs
µs
µs
µs
µs
µs
V
V
V
V
V