KSC5502DT Fairchild Semiconductor, KSC5502DT Datasheet - Page 2

• Manufacturer Part Number: KSC5502DT
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Electrical Characteristics
I
I
I
h
V
V
C
C
f
V
BV
BV
BV
CES
CEO
EBO
T
Symbol
FE
CE
BE
F
ib
ob
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
Parameter
T
C
=25 C unless otherwise noted
I
V
V
I
I
V
I
I
V
V
V
V
V
I
I
I
I
I
I
I
V
I
I
I
I
C
C
E
C
C
B
C
B
C
C
B
C
C
F
F
F
CES
BE
CE
EB
CE
CE
CE
EB
CB
=500 A, I
=0.02A
=0.08A
=0.08A
=0.2A
=0.4A
=1A
=1mA, I
=5mA, I
=0.5A
=0.2A,
=0.4A,
=1A, I
=0.4A,
=1A, I
=0.5A,V
=0
=12V, I
=8V, I
=600V, I
=1V, I
=1V, I
=2.5V,
=10V, I
=1200V,
Test Condition
B
B
=0.2A
=0.2A
C
E
B
C
C
CE
=0
=0
C
=0, f=1MHz
=0.2A
=1A
E
C
B
=0
=0, f=1MHz
=10V
=0
=0
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=25 C
1200
Min.
600
12
15
12
8
4
3
6
1350
Typ.
13.7
0.31
0.54
0.15
0.23
0.40
0.77
0.60
0.83
0.70
0.75
0.59
0.80
0.64
750
385
6.4
4.7
1.3
0.9
28
18
20
12
60
11
Max.
100
500
100
500
500
100
0.8
1.1
0.6
1.0
1.5
3.0
1.0
0.9
1.2
1.0
1.2
1.3
1.5
10
40
30
Rev. A2, August 2001
Units
MHz
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A