FJPF5021 Fairchild Semiconductor, FJPF5021 Datasheet

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FJPF5021

Manufacturer Part Number
FJPF5021
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Quantity
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Part Number:
FJPF5021O
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2003 Fairchild Semiconductor Corporation
High Voltage and High Reliability
• High Speed Switching : t
• Wide SOA
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
f
V
V
V
I
I
I
P
T
T
BV
BV
BV
V
I
I
h
h
V
V
C
t
t
t
FE
T
C
CP
B
CBO
EBO
ON
STG
F
Symbol
FE1
FE2
J
STG
CBO
EBO
C
CEX
CE
BE
Symbol
ob
CEO
CBO
CEO
EBO
(sat)
(sat)
Classification
(sus)
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
F
= 0.1 s(Typ.)
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
15 ~ 30
=25 C unless otherwise noted
R
FJPF5021
I
I
I
I
L = 1mH, Clamped
V
V
V
V
I
I
V
V
V
I
R
C
C
E
C
C
C
C
CB
EB
CE
CE
CB
CE
CC
L
= 1mA, I
= 1mA, I
= 5mA, I
= 2.5A, I
= 3A, I
= 3A, I
= 5I
= 50
= 5V, I
= 500V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, I
= 200V
Test Condition
B1
B
B
= -2.5I
= 0.6A
= 0.6A
E
B
C
B1
C
C
C
E
C
= 0
= 0
= 0
= 0
= 0.6A
= 3A
E
= -I
= 0, f = 1MHz
= 0.6A
= 0
B2
B2
20 ~ 40
= 4A
= 1A
O
1
1.Base
Min.
800
500
500
15
8
7
- 55 ~ 150
2.Collector
Value
800
500
150
10
40
5
2
7
TO-220F
Typ.
0.1
15
80
30 ~ 50
Max.
3.Emitter
Y
1.5
0.5
0.3
10
10
50
1
3
Units
Rev. A, May 2003
W
Units
V
V
V
A
A
A
MHz
C
C
pF
V
V
V
V
V
V
A
A
s
s
s

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FJPF5021 Summary of contents

Page 1

... Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2003 Fairchild Semiconductor Corporation FJPF5021 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 5mA ...

Page 2

... BE 0.1 V (sat) CE 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2003 Fairchild Semiconductor Corporation 100 I = 200mA 100mA 50mA 20mA 0. 0.1 ...

Page 3

... Typical Characteristics 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 60 Vcc=50V, I =1A - 1mH 1000 10000 100 125 150 175 C], CASE TEMPERATURE C Figure 8. Power Derating ...

Page 4

... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2003 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, May 2003 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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