FJA4213 Fairchild Semiconductor, FJA4213 Datasheet

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FJA4213

Manufacturer Part Number
FJA4213
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FJA4213-O
Quantity:
20
Part Number:
FJA4213OTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
2SA1962/FJA4213
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: I
• High Power Dissipation : 130watts
• High Frequency : 30MHz.
• High Voltage : V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5242/FJA4313.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* Device mounted on minimum pad size
h
BV
BV
BV
I
I
P
T
R
C
B
FE
J
D
θJC
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
, T
CBO
CEO
EBO
Symbol
Symbol
STG
Classification
Thermal Resistance, Junction to Case
CEO
Classification
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation(T
Derate above 25°C
Junction and Storage Temperature
= -250V
h
FE1
C
= -17A
T
a
=25°C unless otherwise noted
C
=25°C)
Parameter
Parameter
T
a
= 25°C unless otherwise noted
1
55 ~ 110
R
- 50 ~ +150
Ratings
1.Base 2.Collector 3.Emitter
Max.
1
-250
-250
1.04
-1.5
130
-17
0.96
-5
80 ~ 160
O
www.fairchildsemi.com
January 2009
TO-3P
Units
Units
W/°C
°C/W
°C
W
V
V
V
A
A

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FJA4213 Summary of contents

Page 1

... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol R Thermal Resistance, Junction to Case θJC * Device mounted on minimum pad size h Classification FE Classification h FE1 © 2009 Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev 25°C unless otherwise noted a Parameter =25° =25°C unless otherwise noted a Parameter 110 1 ...

Page 2

... Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number 2SA1962RTU 2SA1962OTU FJA4213RTU FJA4213OTU © 2009 Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev =25°C unless otherwise noted a Test Condition I =-5mA =-10mA ...

Page 3

... 0 [A], COLLECTOR CURRENT C Figure 3. DC current Gain ( O Grade ) 10000 o o Tj=-25 C Tj=25 C 1000 100 0.1 1 Ic[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage © 2009 Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev -900mA -800mA -700mA B 100 I = -300mA -200mA -100mA ...

Page 4

... Pulse duration [sec] Figure 7. Thermal Resistance 160 140 120 100 C], CASE TEMPERATURE C Figure 9. Power Derating © 2009 Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev. C -100 -10 -1 -0.1 -0.01 1 0.01 0.1 1 100 125 150 175 4 I MAX. (Pulsed*) C 10ms* I MAX. (DC) C 100ms* ...

Page 5

... Package Dimensions ø3.20 ±0.10 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 5.45TYP [5.45 ±0.30 © 2009 Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev. C TO-3P ±0.20 15.60 ±0.20 13.60 9.60 ±0.20 5.45TYP ] [5.45 ±0. 4.80 ±0.20 +0.15 1.50 –0.05 ±0.20 1.40 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 6

... Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev. C www.fairchildsemi.com 6 ...

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