KSA1142 Fairchild Semiconductor, KSA1142 Datasheet

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KSA1142

Manufacturer Part Number
KSA1142
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
KSA1142YSTU
Manufacturer:
FSC
Quantity:
5 000
Company:
Part Number:
KSA1142YSTU
Quantity:
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©2000 Fairchild Semiconductor International
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
Audio Frequency Power Amplifier
High Freqency Power Amplifier
• Complement to KSC2682
V
V
V
I
P
P
T
T
I
I
h
h
V
V
f
C
NF
C
CBO
EBO
T
FE
Symbol
J
STG
FE1
FE2
CBO
CEO
EBO
C
C
CE
BE
ob
(sat)
Symbol
(sat)
Classification
Classification
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
h
FE2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
a
C
=25 C unless otherwise noted
=25 C)
T
=25 C)
Parameter
C
=25 C unless otherwise noted
KSA1142
V
V
V
V
I
I
V
V
V
R
C
C
100 ~ 200
CB
EB
CE
CE
CE
CB
CE
S
= - 50mA, I
= - 50mA, I
= 10k , f = 1MHz
= - 3V, I
= - 180V, I
= - 5V, I
= - 5V, I
= - 10V, I
= - 10V, I
= - 10V, I
O
Test Condition
C
C
C
B
B
C
E
C
= 0
= - 1mA
= - 10mA
E
= - 5mA
= - 5mA
= 0, f=1MHz
= - 20mA
= - 1mA
= 0
1
1. Emitter
Min.
- 55 ~ 150
100
Ratings
90
- 180
- 180
- 100
150
1.2
- 5
8
2.Collector
- 0.16
Typ.
- 0.8
160 ~ 320
180
200
200
4.5
4
Y
TO-126
Max.
- 0.5
- 1.5
320
- 1
- 1
7
3.Base
Rev. A, February 2000
Units
mA
W
W
V
V
V
C
C
Units
MHz
pF
dB
V
V
A
A

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KSA1142 Summary of contents

Page 1

... BE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Classification FE Classification h FE2 ©2000 Fairchild Semiconductor International KSA1142 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition 180V ...

Page 2

... CE -0.01 0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 -1 -10 I [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International 1000 Pulse Test 100 I = -350㎂ -100 -120 -140 -160 -0.1 100 ...

Page 3

... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International (Continued 150 200 0 50 Figure 8. Power Derating 100 150 200 250 C], CASE TEMPERATURE C Rev. A, February 2000 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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