KSD794A Fairchild Semiconductor, KSD794A Datasheet

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KSD794A

Manufacturer Part Number
KSD794A
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
Audio Frequency Power Amplifier
• Complement to KSB744/KSB744A
V
I
I
I
P
I
h
V
V
P
T
T
I
h
V
V
f
C
FE
C
CP
B
EBO
CBO
T
Symbol
FE1
FE2
EBO
C
J
STG
CBO
CEO
C
CE
BE
ob
Symbol
(Sat)
(Sat)
Classificntion
Classification
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
h
Collector- Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
FE2
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
KSD794/794A
C
60 ~ 120
=25 C unless otherwise noted
R
: KSD794
: KSD794A
V
V
V
V
I
I
V
V
C
C
CB
EB
CE
CE
CE
CB
=1.5A, I
=1.5A, I
= 3V, I
= 45V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Condition
B
B
C
C
C
E
= 0.15A
= 0.15A
E
E
= 0
= 20mA
= 0.5A
= 0.1A
= 0
= 0, f = 1MHz
100 ~ 200
O
1
1. Emitter
Min.
30
60
- 55 ~ 150
Value
150
0.6
70
45
60
10
2.Collector
5
3
5
1
Typ.
100
0.3
0.8
70
60
40
160 ~ 320
TO-126
Max.
Y
320
1
1
2
2
3.Base
Rev. A1, June 2001
Units
W
W
V
V
V
V
A
A
A
Units
C
C
MHz
pF
V
V
A
A

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KSD794A Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Classificntion FE Classification h FE2 ©2001 Fairchild Semiconductor Corporation KSD794/794A T =25 C unless otherwise noted C Parameter : KSD794 : KSD794A = = =25 C unless otherwise noted C Test Condition V = 45V 3V ...

Page 2

... CE 0.01 1E-3 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation 1000 100 I = 2mA 1000 100 Figure 4. Collector Output Capacitance ...

Page 3

... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve Of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation (Continued 125 150 175 200 100 125 150 175 C], CASE TEMPERATURE C Figure 8 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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