FJD3076 Fairchild Semiconductor, FJD3076 Datasheet
FJD3076
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FJD3076 Summary of contents
Page 1
... Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob ©2001 Fairchild Semiconductor Corporation FJD3076 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I = 1mA ...
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... CE 0.01 1E-3 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 V (mV), BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 1000 100 = 4mA I = 2mA B 10 1E-3 30 1000 100 Figure 4. Collector Output Capacitance ...
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... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. C1, December 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...