FJD3076 Fairchild Semiconductor, FJD3076 Datasheet

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FJD3076

Manufacturer Part Number
FJD3076
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJD3076TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
I
V
V
V
P
T
T
BV
BV
BV
I
I
h
V
f
C
C
CBO
EBO
T
FE
J
STG
CBO
CEO
EBO
C
CE
ob
Symbol
Symbol
CEO
CBO
EBO
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
FJD3076
I
I
I
V
V
V
I
V
f = 100MHz
V
f = 1MHz
C
C
E
C
CB
EB
CE
CE
CB
= 1mA, I
= 50 A
= 50 A
= 2A, I
= 4V, I
= 20V, I
= 3V, I
= 5V, I
= 10V, I
Test Condition
B
C
= 0.2A
B
C
E
E
E
= 0.5A
= 0
= 0
= -0.5A,
= 0
= 0A,
1. Base 2. Collector 3. Emitter
1
Min.
130
32
40
5
- 55 ~ 150
Value
150
40
32
10
2
5
1
Typ.
100
0.5
50
D-PACK
Max.
390
0.8
Rev. C1, December 2001
1
1
Units
W
W
Units
V
V
V
A
MHz
C
C
pF
V
V
V
V
A
A

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FJD3076 Summary of contents

Page 1

... Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob ©2001 Fairchild Semiconductor Corporation FJD3076 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I = 1mA ...

Page 2

... CE 0.01 1E-3 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 V (mV), BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 1000 100 = 4mA I = 2mA B 10 1E-3 30 1000 100 Figure 4. Collector Output Capacitance ...

Page 3

... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. C1, December 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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