KSC2690A Fairchild Semiconductor, KSC2690A Datasheet

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KSC2690A

Manufacturer Part Number
KSC2690A
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
V
I
I
I
P
V
V
P
T
T
I
I
h
h
V
V
f
C
FE
C
CP
B
CBO
EBO
T
FE1
FE2
EBO
C
J
STG
CBO
CEO
C
CE
BE
ob
Symbol
Symbol
(sat)
(sat)
Classificntion
Classification
h
FE2
Collector-Base Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current(DC)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
Parameter
a
C
T
=25 C)
=25 C)
: KSC2690
: KSC2690A
: KSC2690
: KSC2690A
C
KSC2690/2690A
=25 C unless otherwise noted
60 ~ 120
Parameter
T
C
=25 C unless otherwise noted
R
V
V
V
V
I
I
V
V
C
C
CB
EB
CE
CE
CE
CB
= 1A, I
= 1A, I
= 3V, I
= 120V, I
= 5V, I
= 5V, I
= 5V, I
=10V, I
Test Condition
B
B
C
= 0.2A
= 0.2A
C
C
C
E
= 0
= 5mA
= 0.3A
= 0.2A
=0, f = 1MHz
E
100 ~ 200
= 0
O
1
1. Emitter
Min.
35
60
- 55 ~ 150
Value
150
120
160
120
160
2.Collector
1.2
2.5
0.3
1.2
20
5
Typ.
105
140
155
0.4
19
1
160 ~ 320
TO-126
Max.
Y
320
0.7
1.3
1
1
3.Base
Rev. A, February 2000
Units
W
W
Units
V
V
V
V
V
A
A
A
MHz
C
C
pF
V
V
A
A

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KSC2690A Summary of contents

Page 1

... T C Output Capacitance ob * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Classificntion FE Classification h FE2 ©2000 Fairchild Semiconductor International KSC2690/2690A T =25 C unless otherwise noted C Parameter : KSC2690 : KSC2690A : KSC2690 : KSC2690A = = =25 C unless otherwise noted C Test Condition V = 120V 3V ...

Page 2

... Pulse Test 0.01 0 [A], COLLECTOR CURRENT C Figure 2. DC current Gain f = 1MHz 100 V [V], COLLECTOR-BASE VOLTAGE CB I (max) Pulse C I (max KSC2690 V MAX KSC2690A CEO V MAX CEO 10 100 1000 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 6. Safe Operating Area Rev. A, February 2000 10 1000 ...

Page 3

... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International (Continued 125 150 175 0 25 Figure 8. Power Derating 50 75 100 125 150 175 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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