KSB596 Fairchild Semiconductor, KSB596 Datasheet

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KSB596

Manufacturer Part Number
KSB596
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Power Amplifier Applications
• Complement to KSD526
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
BV
BV
I
I
h
h
V
V
f
C
I
V
V
V
I
P
T
T
CBO
EBO
T
FE
B
C
FE1
FE2
CE
BE
ob
J
STG
Symbol
CBO
CEO
EBO
C
CEO
EBO
(sat)
(on)
Classification
Symbol
Classification
h
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
T
Parameter
C
40 ~ 80
=25 C unless otherwise noted
C
=25 C)
R
KSB596
I
I
V
V
V
V
I
V
V
V
f = 1MHz
C
E
C
CB
EB
CE
CE
CE
CE
CB
= - 10mA, I
= - 50mA, I
= - 3A, I
Test Condition
= - 80V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 10V, I
B
= - 0.3A
C
C
C
C
C
C
B
E
E
= 0
= - 0.5A
= - 3A
= - 3A
= - 0.5A
= 0
= 0
= 0
= 0
70 ~ 140
O
1.Base
1
- 55 ~ 150
Min.
- 80
- 5
Value
40
15
- 0.4
- 80
- 80
150
3
- 5
- 4
30
2.Collector
Typ.
130
- 1
- 1
TO-220
120 ~ 240
Max.
- 100
- 1.7
- 1.5
240
- 70
Y
3.Emitter
Units
Rev. A, February 2000
W
V
V
V
A
A
C
C
Units
MHz
pF
V
V
V
V
A
A

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KSB596 Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (on) Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE Classification h FE1 ©2000 Fairchild Semiconductor International KSB596 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition 50mA 10mA ...

Page 2

... COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic - -0.4 -0.8 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter Saturation Voltage -200 -160 -120 -80 -40 0 -0.2 -0.4 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2000 Fairchild Semiconductor International 1000 I = -60mA B 100 I = -40mA -20mA 0mA -0.001 - - ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 1. Power Derating ©2000 Fairchild Semiconductor International (Continued) 125 150 175 200 Rev. A, February 2000 ...

Page 4

... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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