KSP92 Fairchild Semiconductor, KSP92 Datasheet
KSP92
Manufacturer Part Number
KSP92
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSP92.pdf
(4 pages)
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©2001 Fairchild Semiconductor Corporation
High Voltage Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
P
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
CBO
CEO
EBO
C
C
J
STG
Symbol
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cur-off Current
Emitter Cut-off Current
* DC Current Gain
*Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
Derate above 25 C
Collector Power Dissipation (T
Derate above 25 C
Junction Temperature
Storage Temperature
Parameter
: KSP92
: KSP93
: KSP92
: KSP93
: KSP92
: KSP93
: KSP92
: KSP93
T
a
=25 C unless otherwise noted
T
: KSP92
: KSP93
: KSP92
: KSP93
Parameter
a
=25 C unless otherwise noted
a
C
=25 C)
=25 C)
KSP92/93
I
I
I
V
V
V
V
V
V
I
I
V
V
f=1MHz
C
C
E
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= -100 A, I
= -1mA, I
= -100 A, I
= -20mA, I
= -20mA, I
= -200V, I
= -160V, I
= -3V, I
= -10V, I
= -10V, I
= -10V, I
= -20V, I
= -20V, I
Test Condition
B
C
=0
=0
C
C
C
B
B
C
E
C
E
E
E
= -2mA
= -2mA
=0
= -1mA
= -10mA
= -30mA
= -10mA, f=100MHz
=0
=0
=0
=0
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Value
-300
-200
-300
-200
-500
625
150
1.5
12
-5
5
Min.
-300
-200
-300
-200
25
40
25
50
-5
TO-92
-0.25
-0.25
-0.10
-0.50
-0.90
Max.
6
8
mW/ C
mW/ C
Units
mW
mA
Rev. A1, July 2001
W
V
V
V
V
V
C
C
Units
MHz
pF
pF
V
V
V
V
V
V
V
A
A
A
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KSP92 Summary of contents
Page 1
... KSP93 = = =25 C unless otherwise noted a Test Condition I = -100 KSP92 : KSP93 I = -1mA KSP92 : KSP93 I = -100 KSP92 V = -200V KSP93 V = -160V -3V -10V -1mA -10V -10mA -10V, I ...
Page 2
... LIMITATION@T =25℃ C 625mW THERMAL LIMITATION@T =25℃ A BONDING WIRE LIMITATION -10 SECOND BREAKDOWN LIMITATION T =150℃ -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Active-Regio Safe Operating Area ©2001 Fairchild Semiconductor Corporation -10000 V = -10V CE -1000 -100 -10 -100 -1000 -1 1000 C ib 100 -10 -100 -1 Figure 4. Current Gain Bandwidth Product ...
Page 3
... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, July 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...