KSD261 Fairchild Semiconductor, KSD261 Datasheet
KSD261
Manufacturer Part Number
KSD261
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSD261.pdf
(4 pages)
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©2004 Fairchild Semiconductor Corporation
Low Frequency Power Amplifier
• Complement to KSA643
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
C
CBO
EBO
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
C
=500mW
T
a
120 ~ 240
=25 C unless otherwise noted
T
Parameter
a
Y
=25 C unless otherwise noted
KSD261
I
I
I
V
V
V
I
C
C
E
C
CB
EB
CE
=100 A, I
=100 A, I
=10mA, I
=0.5A, I
=3V, I
=25V, I
=1V, I
Test Condition
C
C
B
B
E
=0
=50mA
=0.1A
C
E
=0
=0
=0
=0
200 ~ 400
G
1. Emitter 2. Base 3. Collector
1
Min.
120
40
20
5
-55 ~ 150
Ratings
500
500
150
40
20
5
Typ.
0.18
TO-92
Max.
400
0.1
0.1
0.4
Units
mW
mA
Rev. B2, April 2004
V
V
V
C
C
Units
V
V
V
V
A
A
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KSD261 Summary of contents
Page 1
... Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE h Classification FE Classification h FE ©2004 Fairchild Semiconductor Corporation KSD261 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA ...
Page 2
... BE 0.1 V (sat [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2004 Fairchild Semiconductor Corporation 1000 = 1.8mA I = 1.6mA 1.4mA 1.2mA B 100 I = 1.0mA 0.8mA 0.6mA ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B2, April 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ ...