FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet - Page 4

• Manufacturer Part Number: FDPC8011S
• Description: This device includes two specialized N-Channel MOSFETs in a dual package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C2
Typical Characteristics (Q1 N-Channel)
40
30
20
10
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
Figure 3. Normalized On Resistance
0
0.0
Figure 1.
1.0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
vs Junction Temperature
GS
= 5 V
= 13 A
V
V
0.3
= 10 V
V
DS
GS
T
GS
-25
V
On Region Characteristics
1.5
J
,
,
GS
T
, GATE TO SOURCE VOLTAGE (V)
= 3 V
DRAIN TO SOURCE VOLTAGE (V)
V
JUNCTION TEMPERATURE
J
GS
= 150
= 3.5 V
V
GS
= 4.5 V
0
0.6
= 10 V
o
C
25
μ
s
2.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
0.9
75
T
J
= -55
2.5
(
T
o
100 125 150
V
J
1.2
C
GS
= 25
)
o
C
= 2.5 V
o
C
μ
s
3.0
1.5
T
J
4
= 25 °C unless otherwise noted
0.01
0.1
40
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
Figure 2.
1
8
4
0
0.0
Figure 4.
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
= 0 V
= 2.5 V
V
3
0.2
SD
T
I
D
J
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
= 150
= 13 A
On-Resistance vs Gate to
GS
10
I
Source Voltage
4
D
,
Source to Drain Diode
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
0.4
C
5
0.6
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
7
0.8
T
J
= -55
30
8
T
J
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T
V
V
T
V
= 25
o
1.0
J
C
GS
GS
J
GS
= 125
= 25
= 10 V
= 3.5 V
= 3 V
9
o
C
μ
μ
o
o
s
s
C
C
1.2
10
40