FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet - Page 4

• Manufacturer Part Number: FDMS7608S
• Description: This device includes two specialized N-Channel MOSFETs in a dual MLP package
• Manufacturer: Fairchild Semiconductor

FDMS7608S Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
50
40
30
20
10
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0
1.5
Figure 3. Normalized On Resistance
0.0
Figure 1.
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
= 5 V
vs Junction Temperature
2.0
GS
= 12 A
V
V
= 10 V
DS
GS
T
-25
0.5
J
,
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
,
T
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
V
J
2.5
GS
V
V
= 150
GS
GS
V
= 4.5 V
0
GS
= 4 V
= 6 V
o
= 10 V
C
μ
25
3.0
s
1.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
J
T
3.5
= -55
J
= 25
75
V
V
GS
GS
1.5
o
o
C
= 3 V
o
C
= 3.5 V
100 125 150
C )
4.0
μ
s
4.5
2.0
T
J
4
= 25°C unless otherwise noted
0.001
0.01
0.1
40
30
20
10
50
10
0
1
6
5
4
3
2
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
= 0 V
3
V
V
0.2
SD
GS
10
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
= 3 V
GS
T
J
I
Source Voltage
4
D
Source to Drain Diode
,
= 150
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
V
o
5
C
GS
20
= 4.5 V
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
I
T
D
J
J
= 12 A
= 125
V
30
= 25
GS
7
0.8
= 6 V
o
o
V
C
C
T
GS
V
J
8
T
GS
= -55
= 3.5 V
J
www.fairchildsemi.com
40
V
= 25
= 4 V
1.0
GS
o
= 10 V
9
C
o
C
μ
μ
s
s
1.2
10
50