FDPF4N60NZ Fairchild Semiconductor, FDPF4N60NZ Datasheet - Page 3

• Manufacturer Part Number: FDPF4N60NZ
• Manufacturer: Fairchild Semiconductor

FDP4N60NZ / FDPF4N60NZ Rev.C0
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.02
Figure 1. On-Region Characteristics
0.1
700
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
20
10
10
1
0.1
1
0.0
0.1
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 10.0V
1.5
GS
Drain Current and Gate Voltage
8.0V
7.0V
6.5V
6.0V
5.5V
V
V
DS
= 0V
DS
, Drain-Source Voltage[V]
, Drain-Source Voltage [V]
I
D
3.0
, Drain Current [A]
(
C ds = shorted
1
V
1
GS
= 10V
4.5
*Notes:
V
1. 250
2. T
)
GS
*Note: T
C
6.0
= 20V
= 25
μ
s Pulse Test
o
C
10
10
C
7.5
= 25
C
C
C
oss
iss
rss
o
C
30
9.0
30
3
0.1
0.1
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
40
10
10
Figure 6. Gate Charge Characteristics
1
1
8
6
4
2
0
0.0
0.0
2
*Notes:
1. V
2. 250
V
1.5
DS
SD
μ
, Body Diode Forward Voltage [V]
= 20V
V
s Pulse Test
Variation vs. Source Current
and Temperature
0.4
GS
Q
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
3.0
4
V
V
V
150
DS
DS
DS
150
= 120V
= 300V
= 480V
o
C
o
0.8
C
4.5
25
*Notes:
1. V
2. 250
-55
o
6.0
C
6
*Note: I
o
GS
25
C
μ
1.2
= 0V
o
s Pulse Test
C
D
7.5
= 3.8A
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1.6
9.0
8