FDMS3626S Fairchild Semiconductor, FDMS3626S Datasheet - Page 7

• Manufacturer Part Number: FDMS3626S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3626S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
100
80
60
40
20
100
0
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0.0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
0.5
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
= 5 V
GS
= 25 A
vs Junction Temperature
V
0.3
DS
= 10 V
1.0
V
T
V
V
-25
,
GS
J
GS
GS
DRAIN TO SOURCE VOLTAGE (V)
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
T
= 2.5 V
= 10 V
J
V
= 125
GS
V
0
0.6
GS
= 3 V
1.5
= 3.5 V
o
C
25
V
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
GS
= 4.5 V
50
0.9
2.0
T
J
= -55
75
T
J
= 25
o
1.2
o
100 125 150
C
C )
2.5
o
C
μ
s
1.5
3.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
10
8
7
6
5
4
3
2
1
0
4
3
2
1
0
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
T
SD
J
0.2
20
V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
GS
Source Voltage
I
D
4
,
V
,
GATE TO SOURCE VOLTAGE (V)
GS
DRAIN CURRENT (A)
o
C
= 2.5 V
0.4
40
T
J
= -55
T
6
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 25
o
C
V
V
0.6
60
GS
GS
o
C
= 3 V
= 4.5 V V
8
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0.8
80
T
V
T
I
J
GS
D
J
GS
= 125
= 25
= 25 A
= 3.5 V
= 10 V
μ
μ
o
o
s
s
C
C
100
1.0
10