FDMC8321L Fairchild Semiconductor, FDMC8321L Datasheet

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FDMC8321L

Manufacturer Part Number
FDMC8321L
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMC8321L Rev.C
FDMC8321L
N-Channel Power Trench
40 V, 49 A, 2.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and hign efficiency
Next
engineered for soft recovery
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC8321L
DS(on)
DS(on)
Generation
= 2.5 mΩ at V
= 4.1 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
enhanced
GS
GS
= 10 V, I
= 4.5 V, I
FDMC8321L
Device
Power 33
body
-Continuous (Package limit)
-Continuous (Silicon limit)
-Pulsed
-Continuous
D
D
= 22 A
= 18 A
diode
T
A
®
D
= 25 °C unless otherwise noted
Parameter
MOSFET
D
technology,
D
DS(on)
D
Package
Power33
Bottom
S
1
S
T
T
T
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
convertional switching PWM contollers. It has been optimized for
low gate charge, low r
reverse recovery performance.
Applications
Pin 1
C
A
C
C
A
S
= 25 °C
Synchronous rectifier
Load switch/Orring
Motor switch
= 25 °C
= 25 °C
= 25 °C
= 25 °C
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1)
S
G
S
S
DS(on)
, fast switching speed body diode
Tape Width
12 mm
-55 to +150
Ratings
±20
100
100
2.3
3.1
40
49
22
86
40
53
December 2011
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMC8321L Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8321L FDMC8321L ©2011 Fairchild Semiconductor Corporation FDMC8321L Rev.C ® MOSFET General Description = This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3.Starting N-ch 0.3 mH FDMC8321L Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC8321L Rev °C unless otherwise noted μ s 1.5 2 100 125 150 100 10 0 ...

Page 4

... SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMC8321L Rev °C unless otherwise noted J 10000 1000 100 100 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. FDMC8321L Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout FDMC8321L Rev.C 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC8321L Rev.C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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