FDMS3622S Fairchild Semiconductor, FDMS3622S Datasheet - Page 7

• Manufacturer Part Number: FDMS3622S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3622S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
140
120
100
140
120
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
0.0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
1.0
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
V
= 34 A
= 5 V
vs Junction Temperature
GS
V
= 10 V
0.3
V
DS
V
T
GS
V
-25
= 3 V
J
GS
GS
,
,
1.5
V
DRAIN TO SOURCE VOLTAGE (V)
= 3.5 V
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
GS
= 4.5 V
T
= 10 V
J
0
= 125
0.6
25
μ
o
s
C
2.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
0.9
V
75
GS
T
J
2.5
T
= 2.5 V
o
= -55
J
100 125 150
1.2
C )
= 25
o
o
C
C
μ
s
1.5
3.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
200
100
0.1
10
1
4
3
2
1
0
5
4
3
2
1
0
0.0
0
Figure 17. On-Resistance vs Gate to
2
Forward Voltage vs Source Current
Figure 19. Source to Drain Diode
V
GS
= 0 V
Current and Gate Voltage
20
V
T
SD
J
0.2
= 125
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
I
D
4
V
Source Voltage
,
,
40
GS
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
C
= 2.5 V
T
0.4
J
60
= -55
T
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
J
V
C
GS
= 25
80
V
0.6
= 3 V
GS
o
= 4.5 V
C
100
8
0.8
T
V
T
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V
I
J
J
GS
D
GS
120
= 125
= 25
= 34 A
= 3.5 V
= 10 V
o
μ
μ
o
C
s
s
C
140
1.0
10