FDMS3624S Fairchild Semiconductor, FDMS3624S Datasheet - Page 3

• Manufacturer Part Number: FDMS3624S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3624S Rev.C2
©2011 Fairchild Semiconductor Corporation
Notes:
1.R
the user's board design.
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :E
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
Q2: E
SD
rr
θJA
Symbol
is determined with the device mounted on a 1 in
AS
AS
of 29 mJ is based on starting T
of 86 mJ is based on starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
= 25
= 25
o
o
c. 125 °C/W when mounted on a
C; N-ch: L = 1.2 mH, I
C; N-ch: L = 0.6 mH, I
a. 57 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
pad of 2 oz copper
AS
AS
V
V
Q1
I
Q2
I
= 7 A, V
F
F
= 17 A, V
GS
GS
= 17.5 A, di/dt = 100 A/μs
= 30 A, di/dt = 300 A/μs
= 0 V, I
= 0 V, I
DD
DD
Test Conditions
= 23 V, V
3
= 23 V, V
S
S
= 17.5 A
= 30 A
GS
GS
= 10 V. 100% test at L = 0.1 mH, I
= 10 V. 100% test at L = 0.1 mH, I
(Note 2)
(Note 2)
θJC
Type
is guaranteed by design while R
Q1
Q2
Q1
Q2
Q1
Q2
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in
AS
AS
Min
= 16 A.
= 31 A.
2
pad of 2 oz copper
Typ
0.8
0.8
23
28
28
9
www.fairchildsemi.com
θCA
Max
1.2
1.2
is determined by
Units
nC
ns
V