FDMS86320 Fairchild Semiconductor, FDMS86320 Datasheet - Page 3

• Manufacturer Part Number: FDMS86320
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS86320 Rev.C
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
50
40
30
20
10
Figure 3. Normalized On Resistance
0
0
Figure 1.
-75
0
3
Figure 5. Transfer Characteristics
I
V
D
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
= 10.5 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
V
V
GS
DS
T
V
1
4
V
-25
J
GS
GS
,
On Region Characteristics
,
= 8 V
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
= 10V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0
T
J
= 150
2
5
V
25
GS
μ
s
o
= 7 V
C
50
T
J
3
6
= 25 °C unless otherwise noted
V
GS
75
T
J
μ
= 6.5 V
= -55
s
o
T
100 125 150
C )
J
4
= 25
o
7
C
V
GS
o
C
= 6 V
5
8
3
0.001
0.01
100
40
30
20
10
0.1
10
5
4
3
2
1
0
0
Figure 2.
Figure 4.
1
0.2
Forward Voltage vs Source Current
5
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= 6 V
V
= 0 V
T
SD
J
0.4
, BODY DIODE FORWARD VOLTAGE (V)
= 150
10
6
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
I
Source Voltage
D
Source to Drain Diode
,
,
V
GATE TO SOURCE VOLTAGE (V)
I
o
DRAIN CURRENT (A)
GS
D
C
= 10.5 A
= 6.5 V
0.6
20
7
T
J
= 125
μ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.8
30
o
T
8
C
J
V
= 25
GS
T
J
= -55
= 7 V
o
C
T
J
1.0
www.fairchildsemi.com
40
= 25
9
o
V
C
V
GS
GS
o
= 10 V
C
= 8 V
μ
s
1.2
10
50