FDMS8020 Fairchild Semiconductor, FDMS8020 Datasheet

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FDMS8020

Manufacturer Part Number
FDMS8020
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMS8020 Rev. C
FDMS8020
N-Channel PowerTrench
30 V, 42 A, 2.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS8020
DS(on)
DS(on)
generation
= 2.5 mΩ at V
= 3.6 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
enhanced
GS
GS
= 10 V, I
= 4.5 V, I
FDMS8020
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
body
D
D
= 26 A
= 21.5 A
diode
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
D
D
Bottom
DS(on)
Power 56
Package
1
S
S
T
T
T
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
VRM Vcore Switching for Desktop and Server
OringFET / Load Switching
DC-DC Conversion
Motor Bridge Switch
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 4)
(Note 3)
5
6
7
8
DS(on)
Tape Width
, fast switching speed ang body
12 mm
-55 to +150
Ratings
±20
131
150
1.9
2.5
30
42
26
93
65
50
November 2011
www.fairchildsemi.com
3000 units
4
3
2
1
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
A
V

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FDMS8020 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS8020 FDMS8020 ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev. C ® MOSFET General Description = 26 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node = 21 ...

Page 2

... Starting N-ch 0.3 mH 4.As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... DUTY CYCLE = 0.5% MAX 120 150 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev °C unless otherwise noted μ 100 125 150 0.01 ...

Page 4

... MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev °C unless otherwise noted J 10000 1000 V = 100 C ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS8020 Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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