FCPF190N60 Fairchild Semiconductor, FCPF190N60 Datasheet - Page 3

• Manufacturer Part Number: FCPF190N60
• Manufacturer: Fairchild Semiconductor

FCP190N60 / FCPF190N60 Rev. C11
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10000
Figure 1. On-Region Characteristics
1000
100
0.3
0.5
0.5
0.4
0.3
0.2
0.1
50
10
10
1
1
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 15.0V
Drain Current and Gate Voltage
GS
10.0V
V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
10
DS
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
, Drain Current [A]
(
C ds = shorted
20
V
GS
1
V
10
= 10V
GS
*Notes:
= 20V
1. 250
2. T
30
)
*Note: T
C
= 25
μ
s Pulse Test
o
100
C
40
C
C
C
C
= 25
iss
rss
oss
o
C
600
10
50
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
100
10
10
10
1
1
8
6
4
2
0
0.2
2
0
*Notes:
1. V
2. 250
V
DS
0.4
SD
3
Variation vs. Source Current
μ
and Temperature
12
= 20V
, Body Diode Forward Voltage [V]
s Pulse Test
V
Q
GS
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
0.6
4
V
V
V
150
150
DS
DS
DS
24
o
= 120V
= 300V
= 480V
o
C
C
-55
0.8
5
o
C
25
36
*Notes:
1. V
2. 250
o
C
1.0
6
*Note: I
25
GS
o
μ
C
= 0V
s Pulse Test
48
1.2
D
7
= 10A
www.fairchildsemi.com
1.4
8
60