FCP190N60 Fairchild Semiconductor, FCP190N60 Datasheet - Page 2

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FCP190N60

Manufacturer Part Number
FCP190N60
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FCP190N60
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FCP190N60
Quantity:
5 000
Part Number:
FCP190N60E
Manufacturer:
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Quantity:
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FCP190N60 / FCPF190N60 Rev. C11
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
g(tot)
gs
gd
rr
AS
SD
Device Marking
DSS
DS
Symbol
J
= 4A, V
≤ 10A, di/dt ≤ 200A/μs, V
FCPF190N60
DSS
FCP190N60
eff.
DD
= 50V, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
DD
≤ BV
FCPF190N60
FCP190N60
DSS
Device
, Starting T
Parameter
J
= 25°C
J
T
= 25°C
C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
V
V
I
V
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
Drain open
V
V
D
V
GS
GS
GS
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
F
GS
= 10mA, Referenced to 25
/dt = 100A/μs
= 480V, V
= 480V, T
= 0V, I
= 0V, I
= 0V, I
= 0V, I
= ±20V, V
= 20V, I
= 25V, V
= 380V, V
= 0V to 480V, V
= 380V, I
= 380V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
D
D
D
SD
2
SD
D
Reel Size
D
D
= 10mA, T
= 10mA, T
= 20A
GS
D
g
D
= 10A
= 10A
= 10A
= 10A
GS
C
= 250μA
DS
GS
= 4.7Ω
= 10A
= 10A
= 125
= 0V
-
-
= 0V
= 0V
= 0V, f = 1.0MHz
GS
o
C
J
J
= 0V
= 25°C
= 150°C
o
(Note 4)
C
(Note 4)
Tape Width
-
-
Min.
600
650
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2220
1630
Typ.
0.67
0.17
280
700
160
3.8
21
85
42
57
21
20
10
64
9
1
-
-
-
-
-
-
-
-
5
-
Quantity
www.fairchildsemi.com
Max.
0.199
±100
2950
2165
20.2
60.6
128
138
1.2
3.5
10
74
50
30
20
1
50
50
-
-
-
-
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
pF
pF
pF
pF
pF
μC
nA
ns
ns
ns
ns
ns
Ω
V
V
V
Ω
A
A
V
V
S
o
C

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