FDMC7582 Fairchild Semiconductor, FDMC7582 Datasheet - Page 4

• Manufacturer Part Number: FDMC7582
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMC7582 Rev.C6
Typical Characteristics
30
10
10
0.001
0.01
1
100
8
6
4
2
0
Figure 7.
0.1
10
0
1
0.01
I
D
Figure 9.
= 16.7 A
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
JA
= MAX RATED
= 25
0.01
= 125
Switching Capability
V
t
Gate Charge Characteristics
o
AV
C
DS
5
0.1
Operating Area
, TIME IN AVALANCHE (ms)
o
, DRAIN to SOURCE VOLTAGE (V)
Unclamped Inductive
Q
C/W
DS(on)
g
, GATE CHARGE (nC)
0.1
T
J
10
= 125
1
T
1
V
o
T
J
V
DD
C
J
DD
= 25°C unless otherwise noted
= 25
= 16 V
= 10 V
T
10
o
15
J
C
= 100
10
V
DD
10 s
DC
100
1 ms
100 ms
1 s
10 ms
o
= 13 V
C
μ
s
100200
100
20
4
3000
1000
1000
100
100
100
0.5
80
60
40
20
50
10
Figure 10.
0
1
10
0.1
25
Figure 12.
-4
f = 1 MHz
V
Limited by Package
Figure 8.
GS
SINGLE PULSE
R
T
Current vs Case Temperature
A
θ
JA
= 0 V
= 25
10
= 125
-3
V
50
o
DS
C
Power Dissipation
Maximum Continuous Drain
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
V
o
C
C/W
10
Single Pulse Maximum
GS
Capacitance vs Drain
, C
t, PULSE WIDTH (sec)
-2
= 4.5 V
ASE TEMPERATURE (
75
1
10
-1
V
GS
100
1
= 10 V
R
10
o
θ
JC
C )
125
= 2.4
V
www.fairchildsemi.com
10
GS
100
C
C
C
= 10 V
oss
o
iss
rss
C/W
1000
150
30