FDP150N10A_F102 Fairchild Semiconductor, FDP150N10A_F102 Datasheet - Page 3

• Manufacturer Part Number: FDP150N10A_F102
• Manufacturer: Fairchild Semiconductor

FDP150N10A_F102 Rev. A1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
3000
1000
100
400
100
40
30
20
10
10
10
4
0
5
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 15.0V
Drain Current and Gate Voltage
GS
10.0V
V
8.0V
6.5V
6.0V
5.5V
5.0V
V
DS
= 0V
DS
50
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
1
(
C ds = shorted
V
GS
= 10V
100
1
V
*Notes:
GS
1. 250
2. T
)
= 20V
*Note: T
10
C
= 25
μ
s Pulse Test
150
o
C
C
= 25
C
C
C
iss
o
oss
rss
C
200
100
7
3
200
100
400
100
10
Figure 2. Transfer Characteristics
10
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
8
6
4
2
0
1
1
0.0
0
2
*Notes:
1. V
2. 250
V
DS
SD
μ
3
= 10V
s Pulse Test
, Body Diode Forward Voltage [V]
V
Variation vs. Source Current
and Temperature
Q
5
GS
g
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
V
V
V
175
0.5
DS
DS
DS
= 20V
= 50V
= 80V
o
4
C
175
o
10
C
-55
25
o
5
C
o
*Notes:
1. V
2. 250
*Note: I
C
25
1.0
o
GS
C
μ
15
= 0V
s Pulse Test
D
6
= 50A
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20
1.5
7