FDMA3028N Fairchild Semiconductor, FDMA3028N Datasheet - Page 4

• Manufacturer Part Number: FDMA3028N
• Description: This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
Typical Characteristics
16
12
1.6
1.4
1.2
1.0
0.8
0.6
16
12
8
4
0
Figure 3. Normalized On Resistance
0.0
8
4
0
Figure 1.
-75
0
Figure 5. Transfer Characteristics
V
V
V
V
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
GS
GS
GS
V
GS
= 3.8 A
DS
-50
= 4.5 V
= 3.5 V
= 3 V
=2.5 V
vs Junction Temperature
= 4.5 V
= 5 V
V
V
T
GS
V
DS
-25
0.5
J
GS
On Region Characteristics
,
,
= 1.8 V
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
J
1
0
= 150
25
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
o
1.0
μ
C
s
50
T
T
J
J
T
= -55
J
= 25°C unless otherwise noted
= 25
75
2
o
C
1.5
o
C
o
100 125 150
C )
μ
s
2.0
3
4
0.001
200
150
100
2.5
2.0
1.5
1.0
0.5
0.01
50
0.1
Figure 2.
Figure 4.
20
10
0
1.5
Forward Voltage vs Source Current
1
0.0
vs Drain Current and Gate Voltage
Figure 6.
0
V
V
GS
GS
V
= 0 V
= 1.8 V
2.0
SD
0.2
T
Normalized On-Resistance
V
, BODY DIODE FORWARD VOLTAGE (V)
J
V
On-Resistance vs Gate to
GS
= 150
GS
Source Voltage
T
T
Source to Drain Diode
I
4
,
D
J
J
,
GATE TO SOURCE VOLTAGE (V)
= 2.5 V
= 25
= 125
DRAIN CURRENT(A)
V
2.5
0.4
o
GS
C
o
= 3 V
C
o
C
3.0
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
8
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
T
GS
J
T
= -55
= 3.5 V
I
D
J
3.5
0.8
= 25
= 3.8 A
o
C
o
12
C
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V
1.0
4.0
GS
= 4.5 V
μ
μ
s
s
1.2
4.5
16