FDP085N10A_F102 Fairchild Semiconductor, FDP085N10A_F102 Datasheet - Page 2

• Manufacturer Part Number: FDP085N10A_F102
• Manufacturer: Fairchild Semiconductor

FDP085N10A_F102 Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3 mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
Q
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
g(tot)
gs
gs2
gd
rr
SD
Device Marking
DSS
Symbol
J
≤ 96 A, di/dt ≤ 200A/μs, V
FDP085N10A
DSS
(er)
AS
= 13.4 A, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshoid to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
DD
FDP085N10A_F102
≤ BV
DSS
Device
Parameter
, Starting T
J
= 25°C
J
T
= 25°C
C
= 25
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
I
Drain Open, f = 1MHz
V
V
D
D
D
DS
DS
GS
DD
GS
GS
DD
GS
GS
DS
DS
DS
GS
F
= 250μA, V
= 250μA, Referenced to 25
= 96A
/dt = 100A/μs
= 80V, V
= 80V, T
= 0V, I
= ±20V, V
= 10V, I
= 50V, V
= 50V, V
= 50V, I
= 10V, R
= 50V,V
= V
= 10V, I
= 10V, V
DS
Test Conditions
, I
SD
2
D
D
Reel Size
D
D
GS
C
GS
GS
GS
GS
DS
GEN
= 96A
= 96A
= 96A
= 96A
= 250μA
DS
= 150
= 0V, I
= 0V
= 50V
= 0V
= 0V
= 0V,T
-
= 0V
= 4.7Ω
o
C
SD
C
= 25
= 96A
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
o
(Note 4)
C
C
Tape Width
-
Min.
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2025
Typ.
0.07
0.97
7.35
468
752
9.7
5.0
7.5
59
80
72
20
31
18
22
29
-
-
-
-
-
-
-
8
-
Quantity
www.fairchildsemi.com
Max.
±100
2695
500
620
384
1.3
4.0
8.5
40
96
46
54
68
26
1
50
-
-
-
-
-
-
-
-
-
-
-
Units
V/
mΩ
nC
nC
nC
nC
μA
pF
pF
pF
pF
nC
nA
ns
ns
ns
ns
ns
Ω
V
A
A
V
V
S
o
C