2N7002KW Fairchild Semiconductor, 2N7002KW Datasheet - Page 4

• Manufacturer Part Number: 2N7002KW
• Manufacturer: Fairchild Semiconductor

2N7002KW Rev. A0
© 2011 Fairchild Semiconductor Corporation
Typical Performance Characteristics
10
10
10
10
10
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
-1
-2
-3
-4
0
10
100
Figure 11. Maximum Safe Operating Area.
10
-1
1
Figure 7. Breakdown Voltage Variation
Figure 9. Capacitance Characteristics.
-25
1
f = 1MHZ
V
GS
I
= 0V
D
=250uA
R
0
DS(on)
T
V
Limit
with Temperature
J
, Junction Temperatture(
DS
10
, Drain-Source Voltage [V]
V
0
25
DS
. Drain to Source Voltage (V)
10
50
DC
Rthja=410
Vgs=10V
Single Pulse
T
1S
a
100ms
= 25
10
75
10ms
1
o
o
C
C/W
1ms
o
C)
100
100
C
C
μ
s
OSS
RSS
C
ISS
100
125
10
(Continued)
2
4
Figure 8. Body Diode Forward Voltage Variation
10000
Figure 12. Transient Thermal Response Curve.
1000
0.01
100
0.1
0.1
10
1
1
1E-4
0.0
10
8
6
4
2
0
Figure 10. Gate Charge Characteristics.
0.0
D=1%
V
20%
50%
10%
2%
V
5%
GS
Single Pulse
DS
= 0 V
= 25V
1E-3
V SD . Body Diode Forward Voltage [V]
0.2
with Source Current and Temperature.
T
A
I
I
=25
D
D
0.2
= 500mA
= 115mA
T
A
o
=125
C
0.01
0.4
o
C
Qg. Gate Charge (nC)
0.4
t1, time(sec)
I
0.1
D
= 280mA
0.6
1
0.6
T
A
=-55
0.8
Rthja(t)=r(t)*Rthja
Rthja=410
o
10
C
0.8
o
1.0
C/W
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100
1.2
1.0
1000