FDD18N20LZ Fairchild Semiconductor, FDD18N20LZ Datasheet

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FDD18N20LZ

Manufacturer Part Number
FDD18N20LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2011 Fairchild Semiconductor Corporation
FDD18N20LZ Rev. A
FDD18N20LZ
N-Channel MOSFET
200V Logic, 16A, 0.125
Features
• R
• Low Gate Charge
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
JC
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 0.125( Max.) @ V
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
GS
= 10V, I
D-PAK
D
T
= 8A
D
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
= 25
C unless otherwise noted*
o
C)
C
C
= 25
= 100
1
o
C
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
o
C)
o
C)
G
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
D
D
S
S
FDD18N20LZ
FDD18N20LZ
-55 to +150
200
±20
320
300
9.6
8.9
0.7
1.4
16
64
16
10
89
83
February 2011
UniFET
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDD18N20LZ Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2011 Fairchild Semiconductor Corporation FDD18N20LZ Rev. A  Description = 8A D These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... DD G 16A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD18N20LZ Rev. A Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250 ...

Page 3

... Note: 100 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDD18N20LZ Rev. A Figure 2. Transfer Characteristics 100 10 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 ...

Page 4

... 150 Single Pulse 0.1 0 Collector-Emitter Voltage 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDD18N20LZ Rev. A (Continued) Figure 8. On-Resistance Variation 2.4 2.0 1.6 1.2 * Notes : 0 250uA D 0.4 -80 80 120 160 Figure 10. Maximum Drain Current 16   100 s 12 ...

Page 5

... FDD18N20LZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD18N20LZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDD18N20LZ Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD18N20LZ Rev. A ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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