FCB20N60F Fairchild Semiconductor, FCB20N60F Datasheet - Page 3

• Manufacturer Part Number: FCB20N60F
• Manufacturer: Fairchild Semiconductor

FCB20N60F Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
10000
Figure 3. On-Resistance Variation vs.
10
10
10
9000
8000
7000
6000
5000
4000
3000
2000
1000
Figure 1. On-Region Characteristics
2
1
0
10
0.4
0.3
0.2
0.1
0.0
0
10
-1
Top :
Bottom :
Drain Current and Gate Voltage
0
-1
5
4
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
10
GS
15
V
C
V
DS
20
rss
C
C
DS
, Drain-Source Voltage [ V]
iss
oss
, Drain-Source Voltage [ V]
10
25
I
10
D
0
, Drain Current [ A]
0
30
35
V
40
GS
= 10V
45
C
C
C
iss
oss
rss
* Notes :
50
= C
= C
= C
10
1. 250 s Pulse Test
2. T
10
* Note : T
1
gs
gd
ds
1
V
C
+ C
+ C
55
GS
= 25
gd
gd
= 20V
* Notes :
(C
o
1. V
2. f = 1 MHz
C
J
60
ds
= 25
= shorted)
GS
= 0 V
o
C
65
70
3
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
2
1
0
0.2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
2
Figure 6. Gate Charge Characteristics
10
Variation vs. Source Current
0.4
150
20
4
o
V
C
25
V
0.6
Q
and Temperatue
GS
SD
o
C
G
150
, Total Gate Charge [ nC]
, Gate-Source Voltage [ V]
, Source-Drain Voltage [ V]
30
o
C
25
o
0.8
C
V
DS
V
DS
= 400V
40
6
V
= 250V
DS
-55
= 100V
1.0
o
C
50
* Note:
* Notes :
1.2
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
* Note : I
60
8
DS
GS
= 40V
= 0V
D
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= 20A
1.4
70
10
1.6
80